GaAs-Wafer
GaAs (Gallium Arsenide) Wafers are compound semiconductor wafers known for their high electron mobility and excellent high-frequency performance. They are widely used in RF devices, LEDs, lasers, and high-speed communication chips.
| Description | Specification |
|---|---|
| Size | 4~12inch |
| Orientation | <100> |
| Layer Thickness | 1~100㎛ (Custom processing available upon request) |
| Layer Resistivity | 0.5~20Ω·cm (Available according to order specifications) |
| Handle Wafer Resistivity | 1 ~ 200 Ω·cm |
| Surface | SSP, DSP |
| Type | P Type, N Type |
본문
| Description | Specification |
|---|---|
| Size | 4~12inch |
| Orientation | <100> |
| Layer Thickness | 1~100㎛ (Custom processing available upon request) |
| Layer Resistivity | 0.5~20Ω·cm (Available according to order specifications) |
| Handle Wafer Resistivity | 1 ~ 200 Ω·cm |
| Surface | SSP, DSP |
| Type | P Type, N Type |
- PrevEPI-Wafer 25.09.04