InP-wafer
InP (Indium Phosphide) wafers are III–V compound semiconductor materials specifically designed for high-speed, high-frequency, and optical communication applications.
With superior electron mobility and saturation velocity compared to silicon, InP wafers
With superior electron mobility and saturation velocity compared to silicon, InP wafers
| Description | Specification |
|---|---|
| Size | 2~4inch |
| Type/Dopant | N-type/P-type/Semi-insulating |
| Orientation | <100>, <110>, <111> |
| Resistivity(Ω㎝) | Depends |
| Thickness(um) | Thickness-specific inquiries are available |
| Surface | SSP, DSP |
| Carrier Concentration | 1×10¹⁶ ~ 1×10¹⁹ cm⁻³ |
| Flat.Notch Type | Available |
| Processing | Standard thickness and customized thickness wafers available |
본문
| Description | Specification |
|---|---|
| Size | 2~4inch |
| Type/Dopant | N-type/P-type/Semi-insulating |
| Orientation | <100>, <110>, <111> |
| Resistivity(Ω㎝) | Depends |
| Thickness(um) | Thickness-specific inquiries are available |
| Surface | SSP, DSP |
| Carrier Concentration | 1×10¹⁶ ~ 1×10¹⁹ cm⁻³ |
| Flat.Notch Type | Available |
| Processing | Standard thickness and customized thickness wafers available |
- PrevGaAs-Wafer 25.09.04