SOI-Wafer
SOI (Silicon-On-Insulator) Wafers feature a structure in which a thin silicon layer is formed on top of an insulating oxide layer placed over the silicon substrate. They are widely used in semiconductor devices that require high-speed operation and low po
| Description | Specification |
|---|---|
| Size | 4~12inch |
| Orientation | <100>, <110>, <111> |
| Diameter | 50.8±0.1mm |
| Layer Thickness | 0.05~5㎛ (Custom processing available upon request) |
| Layer Resistivity | 1~30Ω·cm (Available according to order specifications) |
| Handle Wafer Resistivity | 1 ~ 100 Ω·cm |
| TTV | ≤ 1um (Custom processing available upon request) |
| Surface | SSP, DSP |
| Type | P Type, N Type |
본문
| Description | Specification |
|---|---|
| Size | 4~12inch |
| Orientation | <100>, <110>, <111> |
| Diameter | 50.8±0.1mm |
| Layer Thickness | 0.05~5㎛ (Custom processing available upon request) |
| Layer Resistivity | 1~30Ω·cm (Available according to order specifications) |
| Handle Wafer Resistivity | 1 ~ 100 Ω·cm |
| TTV | ≤ 1um (Custom processing available upon request) |
| Surface | SSP, DSP |
| Type | P Type, N Type |